Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H

Update Item Information
Publication Type Journal Article
School or College College of Science
Department Physics
Creator Vardeny, Zeev Valentine
Other Author Pfost, D.; Liu, Hsian-na; Tauc, J.
Title Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H
Date 1984
Description The steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are interpreted in terms of two kinds of optical transitions of photoexcited carriers from traps in the gap into the bands of which one produces absorption and the other produces bleaching. The photoinduced absorption in microcrystalline Si:H is due to free carriers in the crystalline grains whose recombination is dominated by the surrounding amorphous matrix.
Type Text
Publisher American Institute of Physics (AIP)
Volume 120
First Page 1
Last Page 7
DOI 10.1063/1.34741
Subject Photoinduced absorption; Si:H; Ge:H; Amorphous silicon; Amorphous germanium; Microcrystalline silicon
Subject LCSH Amorphous semiconductors -- Optical properties
Language eng
Bibliographic Citation Vardeny, Z. V., Pfost, D., Liu, H., & Tauc, J. (1984). Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H. AIP Conference Proceedings, 120, 1-7.
Rights Management ©American Institute of Physics. The following article appeared in Vardeny, Z. V., Pfost, D., Liu, H., & Tauc, J., AIP Conference Proceedings, 120, 1984 and may be found at http://dx.doi.org/10.1063/1.34741
Format Medium application/pdf
Format Extent 313,992 bytes
Identifier ir-main,9591
ARK ark:/87278/s66h51pt
Setname ir_uspace
ID 703792
Reference URL https://collections.lib.utah.edu/ark:/87278/s66h51pt
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