Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds

Update item information
Publication Type Journal Article
School or College College of Engineering
Department Electrical & Computer Engineering; Materials Science & Engineering
Creator Stringfellow, Gerald B.; Sadwick, Laurence P.
Other Author Hill, C. W.
Title Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds
Date 1994
Description The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP).
Type Text
Publisher Institute of Electrical and Electronics Engineers (IEEE)
Subject Chemical Beam Epitaxy; CBE
Subject LCSH Phosphine; Phosphorus compounds; Crystal growth
Language eng
Bibliographic Citation Hill, C. W., Stringfellow, G. B., & Sadwick, L. P. (1994). Low pressure pyrolysis of alternatep hosphorus precursors for chemical beam epitaxial growth of InP and related compounds. Proceedings of InP and Related Compounds.
Rights Management (c) Institute of Electrical and Electronics Engineers (IEEE)
Format Medium application/pdf
Format Extent 207,996 Bytes
Identifier ir-main,582
ARK ark:/87278/s69z9p30
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 703472
Reference URL https://collections.lib.utah.edu/ark:/87278/s69z9p30
Back to Search Results