Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Huang, Li; Lu, Guang-Hong; Gong, X. G. |
Title |
Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands |
Date |
2006-01 |
Description |
Based on first-principles calculations of surface diffusion barriers, we show that on a compressive Ge(001) surface the diffusivity of Ge is 102-103 times higher than that of Si in the temperature range of 300 to 900 K, while on a tensile surface, the two diffusivities are comparable. Consequently, the growth of a compressive SiGe film is rather different from that of a tensile film. The diffusion disparity between Si and Ge is also greatly enhanced on the strained Ge islands compared to that on the Ge wetting layer on Si(001), explaining the experimental observation of Si enrichment in the wetting layer relative to that in the islands. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
96 |
Issue |
1 |
DOI |
10.1103/PhysRevLett.96.016103 |
citatation_issn |
0031-9007 |
Subject |
Surface mobility; SiGe film; Strained thin films; Surface diffusion barriers |
Subject LCSH |
Surface chemistry |
Language |
eng |
Bibliographic Citation |
Huang, L., Liu, F., Lu, G.-H., & Gong, X. G. (2006). Surface mobility difference between Si and Ge and its effect on growth of SiGe alloy films and islands. Physical Review Letters, 96(1), 016103. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.96.016103 |
Format Medium |
application/pdf |
Format Extent |
579,445 bytes |
Identifier |
ir-main,12144 |
ARK |
ark:/87278/s6nz8rsh |
Setname |
ir_uspace |
ID |
703333 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6nz8rsh |