Plasma-etched polymer waveguides for intrachip optical interconnects

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Publication Type Journal Article
School or College College of Engineering
Department Bioengineering
Creator Christensen, Douglas A.
Title Plasma-etched polymer waveguides for intrachip optical interconnects
Date 1998
Description Optical intrachip communication offers the potential advantages of high speed and lack of electrical interference. We report on progress made on an interconnect design using GaAs LEDs, polymer waveguides, and photodiodes in a silicon substrate. The polymer waveguides are fabricated in polyimide or polystyrene materials, and are patterned by reactive ion etching with a tri-level resist system. The photodiodes are of two designs, including one in which the depletion layer lies directly below the waveguide. The LEDs are fabricated from GaAs deposited by MOCVD on a Ge lattice-matching layer placed between the GaAs and the silicon substrate. Test results are presented for the individual components.
Type Text
Publisher International Society for Optical Engineering (SPIE)
Volume 836
First Page 359
Last Page 363
Subject Polymer waveguides; Intrachip interconnects; LEDs
Subject LCSH Plasma waveguides; Photodiodes; Optical detectors; Light emitting diodes
Language eng
Bibliographic Citation Christensen, D. A. (1988). Plasma-etched polymer waveguides for intrachip optical interconnects. Proceedings of SPIE - The International Society for Optical Engineering, 836, 359-63.
Rights Management (c)Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic electronic or print reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.
Format Medium application/pdf
Format Extent 404,016 bytes
Identifier ir-main,11687
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Date Created 2012-06-13
Date Modified 2021-05-06
ID 703267
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