| Publication Type | journal article |
| School or College | College of Engineering |
| Department | Materials Science & Engineering |
| Creator | Liu, Feng |
| Other Author | Bai, Lugang; Yu, Decai; Lu, Guang-Hong; Wang, Q.; Yilmaz, Hamza |
| Title | Confining P diffusion in Si by an As-doped barrier layer |
| Date | 2007 |
| Description | The miniaturization of Si-based devices requires control of doping profile, which makes the understanding of dopant interaction and diffusion in Si critical. The authors have studied the effect of As doping on P diffusion in Si using first-principles calculations. The authors found a form of As-vacancy complex is energetically favorable, allowing As to consume the vacancy so as to prohibit the vacancy-mediated P diffusion. Also, in the vicinity of As, the vacancy-mediated P diffusion barrier is increased, decreasing further the P mobility. The results provide useful guidance for designing As-doped barriers to block P diffusion in Si wafer processing and metal oxide semiconductor field-effect transistor device fabrication. |
| Type | Text |
| Publisher | American Institute of Physics (AIP) |
| Journal Title | Applied Physics Letters |
| Volume | 91 |
| Issue | 6 |
| First Page | 61926 |
| DOI | 10.1063/1.2769392 |
| citatation_issn | 36951 |
| Subject | P diffusion; Silicon; Arsenic doping; As-doped barrier; Diffusion control |
| Subject LCSH | Semiconductor doping |
| Language | eng |
| Bibliographic Citation | Bai, L., Yu, D., Lu, G.-H., Liu, F., Wang, Q., & Yilmaz, H. (2007). Confining P diffusion in Si by an As-doped barrier layer. Applied Physics Letters, 91(6), 061926. |
| Rights Management | ©American Institute of Physics. The following article appeared in Bai, L., Yu, D., Lu, G.-H., Liu, F., Wang, Q., & Yilmaz, H., Applied Physics Letters, 91 |
| Format Medium | application/pdf |
| Format Extent | 302,651 bytes |
| Identifier | ir-main,12127 |
| ARK | ark:/87278/s60c5cwd |
| Setname | ir_uspace |
| ID | 702932 |
| Reference URL | https://collections.lib.utah.edu/ark:/87278/s60c5cwd |