Optical bias control of dispersive relaxations in α-SI:H

Update item information
Publication Type Journal Article
School or College College of Science
Department Physics
Creator Vardeny, Zeev Valentine
Other Author Pfost, D.; Tauc, J.
Title Optical bias control of dispersive relaxations in α-SI:H
Date 1984-01
Description Relaxation of the photoinduced ir absorption band in a-Si:H was studied in the microsecond time domain as a function of cw bias illumination. The decays follow a power law t-a where the dispersion parameter a increases with bias illumination. At low temperatures, a increases linearly with the steady-state carrier density while at high temperatures it saturates at high illumination levels. These results are interpreted as evidence for the bias-controlled tunneling process at low temperatures and multiple trapping process with tail states under the saturation condition at high temperatures.
Type Text
Publisher American Physical Society
Journal Title Physical Review Letters
Volume 52
Issue 5
First Page 376
Last Page 379
DOI 10.1103/PhysRevLett.52.376
citatation_issn 0031-9007
Subject Optical bias; Dispersive relaxations; Amorphous silicon; a-Si:H; Photoinduced absorption; Bias-controlled tunneling; Multiple trapping
Subject LCSH Amorphous semiconductors -- Optical properties
Language eng
Bibliographic Citation Vardeny, Z, Pfost, D., & Tauc, J. (1984). Optical bias control of dispersive relaxations in α-SI:H. Physical Review Letters, 52(5), 376-9.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.52.376
Format Medium application/pdf
Format Extent 352,620 bytes
Identifier ir-main,9578
ARK ark:/87278/s6zc8m0g
Setname ir_uspace
Date Created 2012-06-13
Date Modified 2021-05-06
ID 702557
Reference URL https://collections.lib.utah.edu/ark:/87278/s6zc8m0g