| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Chen, C.H.; Gordon, D.C.; Brown, D.W.; Vaartstra, B.A. |
| Title |
Tertiarybutyldimethylantimony: a new Sb source for low temperature organometallic vapor phase epitaxial growth of InSb |
| Date |
1992 |
| Description |
This article investigates tertiarybutyldimethylantimony as a source for low-temperature organometallic vapor phase epitaxial growth of indium antimonide (InSB); extraction of good surface morphology InSb layers; efficiency of InSB growth; and, presence of a negligible parasitic reaction between trimethylindium and trimethylantimony. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
61 |
| Issue |
2 |
| Subject |
Tertiarybutyldimethylantimony; Indium antimonide crystals |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
| Language |
eng |
| Bibliographic Citation |
Chen, C.H., Stringfellow, G.B., Gordon, D.C., Brown, D.W., & Vaartstra, B.A. ( 1992). "Tertiarybutyldimethylantimony: A New Sb source for low temperature organometallic vapor phase epitaxial growth of InSb." Applied Physics Letters, 61(2), 204. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Chen, C.H., Stringfellow, G.B., Gordon, D.C., Brown, D.W., & Vaartstra, B.A., Applied Physics Letters, 61(2), 1992 |
| Format Medium |
application/pdf |
| Identifier |
ir-main,11789 |
| ARK |
ark:/87278/s65q5d5d |
| Setname |
ir_uspace |
| ID |
702420 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s65q5d5d |
