| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Williams, Clayton C. |
| Other Author |
Zheng, N.; Mishchenko, E. G.; Bussmann, E. |
| Title |
Three-dimensional model of single electron tunneling between a conductive probe and a localized electronic state in a dielectric |
| Date |
2007 |
| Description |
Motivated by recent measurements of force detected single-electron tunneling, we present a three-dimensional model for the tunneling rate between a metallic tip and a localized electronic state in a dielectric surface. The tip is assumed to be semi-infinite, with electron wave functions approximated by plane waves. A localized electron state in the dielectric sample is approximated by a spherical quantum well. The tunneling rate is obtained with the help of Bardeen's approach and is compared with the results for a one-dimensional square barrier model. A comparison with experimental data is also presented. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Subject |
STM; Scanning; Tunneling Microscopy; Electron states |
| Subject LCSH |
Scanning tunneling microscopy; Tunneling (Physics) |
| Language |
eng |
| Bibliographic Citation |
Zheng, N., Williams, C. C.; & Mishchenko, E. G. (2007). A three-dimensional model of single electron tunneling between a conductive probe and a localized electronic state in a dielectric. Journal of Applied Physics, 101, 093702. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Zheng, N., Williams, C. C.; & Mishchenko, E. G. Journal of Applied Physics, 101, 2007 and may be found at http://link.aip.org/link/?JAPIAU/101/093702/1 |
| Format Medium |
application/pdf |
| Format Extent |
482,102 Bytes |
| Identifier |
ir-main,5177 |
| ARK |
ark:/87278/s6ng57qf |
| Setname |
ir_uspace |
| ID |
702280 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6ng57qf |
