Evidence of internal electric fields in GaInP2 by scanning capacitance and near-field scanning optical microscopy

GaInP2 is studied in cross section with the scanning capacitance and near-field scanning optical microscope. Our study shows significant differences in the electronic and optical properties between ordered single- and two-variant GaInP2. In single-variant samples, spatially uniform capacitance signal, photoluminescence intensity, and band gap are observed. In contrast, a spatially nonuniform capacitance signal, photoluminescence intensity, and band gap are observed in samples with nominally uniform doping.