Two-dimensional scanning capacitance microscopy measurements of cross-sectioned very large scale integration test structures

Scanning probe technology, with its inherent two-dimensionality, offers unique capabilities for the measurement of electrical properties on a nanoscale. We have developed a setup which uses scanning capacitance microscopy (SCM) to obtain electrical information of cross-sectioned samples while simultaneously acquiring conventional topographical atomic force microscopy (AFM) data. In an extension of our work on very large scale integration cross sections, we have now obtained one-dimensional and two-dimensional SCM data of cross sections of blanket-implanted, annealed Si wafers as well as special test structures on Si.