| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering |
| Creator |
Stringfellow, Gerald B. |
| Title |
Compositional ordering in semiconductor alloys |
| Date |
1993 |
| Description |
Compositional ordering has been observed in a wide variety of III/V semiconductor alloys as well as in SiGe alloys. The thermodynamic driving force is now understood in terms of minimization of the microscopic strain energy of the bonds in the solid. However, the mechanism leading to the specific ordered structures formed is only now beginning to be understood. |
| Type |
Text |
| Publisher |
Materials Research Society |
| Volume |
312 |
| First Page |
35 |
| Last Page |
46 |
| Subject |
Semiconductor alloys; Transmission-electron-diffraction pattern; Organometallic Vaper-phase epitaxy; Cathodoluminescence |
| Subject LCSH |
Semiconductors; Order-disorder in alloys; Epitaxy; Crystal growth; Nanostructures |
| Language |
eng |
| Bibliographic Citation |
Stringfellow, G. B. (1993). Compositional ordering in semiconductor alloys. Common Themes and Mechanisms of Epitaxial Growth, ed. P. Fuoss, J. Tsao, D. W. Kisker, A. Zangwill, and T. Kuech. 312, 35-46. |
| Rights Management |
(c) Materials Research Society |
| Format Medium |
application/pdf |
| Format Extent |
3,972,622 bytes |
| Identifier |
ir-main,580 |
| ARK |
ark:/87278/s6ht36x5 |
| Setname |
ir_uspace |
| ID |
706683 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6ht36x5 |
