Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Chang, Hao; Wu, Jian; Gu, Bing-Lin; Duan, Wenhui |
Title |
Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond |
Date |
2005-10 |
Description |
We perform first-principles calculations to explore the physical origin of hydrogen-induced semiconductor surface metallization observed in β-SiC(001)-3 x 2 surface. We show that the surface metallization arises from a novel mechanism of n-type doping of surface band via formation of hydrogen bridge bonds (i.e., Si-H-Si complex). The hydrogen strengthens the weak Si-Si dimers in the subsurface by forming hydrogen bridge bonds, and donates electron to the surface conduction band. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
95 |
Issue |
19 |
DOI |
10.1103/PhysRevLett.95.196803 |
citatation_issn |
0031-9007 |
Subject |
Metallization; Hydrogen adsorption; SiC; n-type doping; Hydrogen bridge bond |
Subject LCSH |
Metallizing |
Language |
eng |
Bibliographic Citation |
Chang, H., Wu, J., Gu, B.-L., Liu, F. & Duan, W. (2005). Physical origin of hydrogen-adsorption-induced metallization of the SiC surface: n-type doping via formation of hydrogen bridge bond. Physical Review Letters, 95(19), 196803. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.95.196803 |
Format Medium |
application/pdf |
Format Extent |
322,451 bytes |
Identifier |
ir-main,12149 |
ARK |
ark:/87278/s6wh377x |
Setname |
ir_uspace |
ID |
703720 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6wh377x |