Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering; Materials Science & Engineering |
Creator |
Stringfellow, Gerald B. |
Other Author |
Chapman, D.C.; Rieth, L.W.; Lee, J. W.; Seong, T.Y. |
Title |
Use of Nitrogen to disorder GaInP |
Date |
2004 |
Description |
Significant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indicate that the use of the surfactant N nearly eliminates the CuPt<sub>B |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Journal of Applied Physics |
Volume |
95 |
Issue |
11 |
First Page |
6145 |
Last Page |
6151 |
DOI |
10.1063/1.1715139 |
citatation_issn |
218979 |
Subject |
Nitrogen; Alloys; Transmission |
Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition; Order-disorder in alloys |
Language |
eng |
Bibliographic Citation |
Chapman, D.C., Rieth, L.W., Stringfellow, G.B., Lee, J. W., & Seong, T.Y. (2004). "The Use of Nitrogen to disorder GaInP." J. Appl. Phys. 95(11), 6145-51. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Chapman, D.C., Rieth, L.W., Stringfellow, G.B., Lee, J. W., & Seong, T.Y., Journal of Applied Physics, 95(11) 2004 and may be found at http://dx.doi.org DOI: 10.1063/1.1715139 |
Format Medium |
application/pdf |
Format Extent |
165,776 Bytes |
Identifier |
ir-main,11674 |
ARK |
ark:/87278/s69p3k28 |
Setname |
ir_uspace |
ID |
705264 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s69p3k28 |