Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering; Materials Science & Engineering |
Creator |
Stringfellow, Gerald B. |
Other Author |
Seong, Tae-Yeon; Kim, Joon Hyung; Chun, Y. S. |
Title |
Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers |
Date |
1997 |
Description |
Transmission electron microscope (TEM) and transmission electron diffraction (TED) studies have been performed to investigate the effects of V/III ratio on ordering and antiphase boundaries (APBs) in organometallic vapor phase epitaxial Ga0.5In0.5P layers grown onto (001) GaAs vicinal substrates at 670 °C. TED and TEM examination showed that the degree of order is higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. TEM results showed that the higher V/III ratio could be used to suppress APBs. In addition, the growth of order-induced heterostructures, where the V/III ratio is increased abruptly during growth, could be used to block the propagation of APBs. Mechanisms are proposed to explain these phenomena. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Volume |
70 |
Issue |
23 |
Subject |
Antiphase boundaries; APB; Heterostructures; Organometallics |
Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
Language |
eng |
Bibliographic Citation |
Seong, T.Y., Kim, J.H., Chun, Y.S., & Stringfellow, G.B. (1997). "Effects of V/III ratio on ordering and antiphase boundaries in GaInP layers." Applied Physics Letters, 70(23), 3137. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Seong, T.Y., Kim, J.H., Chun, Y.S., & Stringfellow, G.B. Applied Physics Letters, 70(23), 1997 |
Format Medium |
application/pdf |
Format Extent |
74,752 Bytes |
Identifier |
ir-main,632 |
ARK |
ark:/87278/s6hq4h1k |
Setname |
ir_uspace |
ID |
702660 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6hq4h1k |