Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering |
Creator |
Rieth, Loren W; Solzbacher, Florian |
Other Author |
Orthner, M. P. |
Title |
High speed wafer scale bulge testing for the determination of thin film mechanical properties |
Date |
2010 |
Description |
A wafer scale bulge testing system has been constructed to study the mechanical properties of thin films and microstructures. The custom built test stage was coupled with a pressure regulation system and optical profilometer which gives high accuracy three-dimensional topographic images collected on the time scale of seconds. Membrane deflection measurements can be made on the wafer scale (50-150 mm) with up to nanometer-scale vertical resolution. Gauge pressures up to 689 kPa (100 psi) are controlled using an electronic regulator with and accuracy of approximately 0.344 kPa (0.05 psi). Initial testing was performed on square diaphragms 350, 550, and 1200 µm in width comprised of 720± 10 nm thick low pressure chemical vapor deposited silicon nitride with ~20 nm of e-beam evaporated aluminum. These initial experiments were focused on measuring the system limitations and used to determine what range of deflections and pressures can be accurately measured and controlled. Gauge pressures from 0 to ~8.3 kPa (1.2 psi) were initially applied to the bottom side of the diaphragms and their deflection was subsequently measured. The overall pressure resolution of the system is good (~350 Pa) but small fluctuations existed at pressures below 5 kPa leading to a larger standard deviation between deflection measurements. Analytical calculations and computed finite element analysis deflections closely matched those empirically measured. Using an analytical solution that relates pressure deflection data for the square diaphragms the Young's modulus was estimated for the films assuming a Poisson's ratio of v=0.25. Calculations to determine Young's modulus for the smaller diaphragms proved difficult because the pressure deflection relationship remained in the linear regime over the tested pressure range. Hence, the calculations result in large error when used to estimate the Young's modulus for the smaller membranes. The deflection measurements of three 1200x1200 µm2 Si3N4−x membranes were taken at increased pressures (>25 kPa) to increase nonlinearity and better determine Young's modulus. This pressure-deflection data were fit to an analytical solution and Young's modulus estimated to be 257±3 GPa, close to those previously reported in literature. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Review of Scientific Instruments |
Volume |
81 |
Issue |
5 |
First Page |
55111 |
Last Page |
55111 |
DOI |
10.1063/1.3427493 |
citatation_issn |
346748 |
Language |
eng |
Bibliographic Citation |
Orthner, M. P., Rieth, L. W., & Solzbacher, F. (2010). High speed wafer scale bulge testing for the determination of thin film mechanical properties. Review of Scientific Instruments, 81(5), 055111-1-055111-7. |
Rights Management |
(c)American Institute of Physics. The following article by Orthner, M. P., Rieth, L. W., & Solzbacher, F. appeared in Review of Scientific Instruments, 81(5) 2010 and may be found at doi:10.1063/1.3427493. |
Format Medium |
application/pdf |
Format Extent |
608,730 bytes |
Identifier |
ir-main,15525 |
ARK |
ark:/87278/s6ff49gj |
Setname |
ir_uspace |
ID |
702944 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6ff49gj |