Chemical beam epitaxial growth of InP and GaP by using tertiarybutylbis (dimethylamino) phosphine

We report the growth of indium phosphide (InP) by using a chemical beam epitaxy (CBE) technique with the group V source tertiarybutylbis (dimethylamino) phosphine (TBBDMAP). The photoluminescence spectra at 15 K showed that the intensity of a peak attributed to impurity recombination and the FWHM increased significantly when the cracker temperature exceed 545 ºC. This paper also reports the growth of GaP without precracking of the TBBDMAP source. While it was not possible to grow InP at 450 ºC, GaP was successfully grown at temperatures as low as 410 ºC, possibly due to the higher Ga-P bond strength which gives a longer TBBDMAP residence time on the surface before desorption. In this study, ethyldimethylindium (EDMIn) and triisopropylgallium (TlPGa) were used as the indium (In) and the gallium (Ga) sources, respectively.