Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Williams, Clayton C. |
Other Author |
Leong, J. K.; Olson, J. M.; Froyen, S. |
Title |
Evidence for internal electric fields in two variant ordered GaInP obtained by scanning capacitance microscopy |
Date |
1996 |
Description |
Single and two variant ordered GaInP samples are studied in cross section with the scanning capacitance microscope. Our study shows significant differences in the electronic properties of single and two variant GaInP. In unintentionally doped, ordered two variant samples, both n and p-type like domains are observed with the scanning capacitance microscope. In contrast, a spatially uniform capacitance signal is observed in unintentionally doped single variant ordered GaInP. These microscopic capacitance observations can be qualitatively explained by bend bending or internal electric fields. |
Type |
Text |
Publisher |
American Physical Society |
Volume |
69 |
Issue |
26 |
First Page |
4081 |
Last Page |
4083 |
Subject |
GaInP2; Atomic ordering; Internal electric fields; Scanning capacitance microscope |
Subject LCSH |
Electric fields; Microscopy; Semiconductor doping |
Language |
eng |
Bibliographic Citation |
Leong, J. K., Williams, C. C., Olson, J. M. & Froyen, S. (1996). Evidence for internal electric fields in two variant ordered gaInP obtained by scanning capacitance microscopy. Applied Physics Letters, 69(26), 4081-3. |
Rights Management |
(c) American Physical Society |
Format Medium |
application/pdf |
Format Extent |
145,841 Bytes |
Identifier |
ir-main,5170 |
ARK |
ark:/87278/s6c82tgn |
Setname |
ir_uspace |
ID |
703405 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6c82tgn |