| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Williams, Clayton C. |
| Other Author |
Slinkman, J.; Hough, W. P.; Wickramasinghe, H. K. |
| Title |
Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy |
| Date |
1989 |
| Description |
Measurement of dopant density in silicon with lateral resolution on the 200 nm scale has been demonstrated with a near-field capacitance technique. The technique is based upon the measurement of local capacitance between a 100 nm tip and a semiconducting surface. Lateral dopant imaging is achieved by the measurement of the voltage-dependent capacitance between tip and sample due to the depletion of carriers in the semiconductor, as the tip is scanned laterally over the surface. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Journal Title |
Applied Physics Letters |
| Volume |
55 |
| Issue |
16 |
| First Page |
1662 |
| Last Page |
1664 |
| DOI |
10.1063/1.102312 |
| citatation_issn |
36951 |
| Subject |
Dopant profile; Doping density; Scanning capacitance microscopy |
| Subject LCSH |
Semiconductor doping; Semiconductor wafers; Scanning electron microscopy; Silicon -- Surfaces |
| Language |
eng |
| Bibliographic Citation |
Williams, C. C., Slinkman, J., Hough, W. P., & Wickramasinghe, H. K. (1989). Lateral dopant profiling with 200 nm resolution by scanning capacitance microscopy. Applied Physics Letters, 55(16), Oct., 1662-4. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Williams, C. C., Slinkman, J., Hough, W. P., & Wickramasinghe, H. K., Applied Physics Letters, 55(16), 1989 and may be found at http://dx.doi.org/10.1063/1.102312 |
| Format Medium |
application/pdf |
| Format Extent |
548,245 bytes |
| Identifier |
ir-main,8582 |
| ARK |
ark:/87278/s66d6b38 |
| Setname |
ir_uspace |
| ID |
702472 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s66d6b38 |
