Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering; Materials Science & Engineering |
Creator |
Stringfellow, Gerald B. |
Other Author |
Bube, R. H. |
Title |
Radiative pair transitions in p-type ZnSe:Cu crystals |
Date |
1968 |
Description |
Shallow levels with an ionization energy of 0.012 eV play an important role in the photoelectronic properties of p-type ZnSe:Cu crystals. These levels exhibit the characteristics of the higher-lying member of an imperfection pair involved in luminescence emission, as well as of a trap determining long-time decay rates of luminescence and photoconductivity, and of a center causing low-temperature reduction of free-electron lifetime. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Volume |
39 |
Issue |
8 |
First Page |
3657 |
Last Page |
3661 |
Subject |
Ionization energy; Luminescence emission; Crystals |
Subject LCSH |
Photoelectricity; Photoconductivity |
Language |
eng |
Bibliographic Citation |
Stringfellow, G. B., Bube, R. H. (1968). Radiative Pair Transitions in p-type ZnSe:Cu Crystals, Journal of Applied Physics, 39(8), 3657-61. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Stringfellow, G. B., Bube, R. H., Journal of Applied Physics, 39(8), 1968 |
Format Medium |
application/pdf |
Format Extent |
412,382 bytes |
Identifier |
ir-main,1897 |
ARK |
ark:/87278/s683493m |
Setname |
ir_uspace |
ID |
702314 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s683493m |