| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Hsu, C. C.; Yuan, J. S.; Cohen, R. M. |
| Title |
Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy |
| Date |
1986 |
| Description |
Presents doping studies of gallium[sub0.5] indium[sub0.5] phosphorus organometallic vapor-phase epitaxy. Distribution coefficient of indium; Description of growth conditions; Case of poor growth morphology for gallium[sub0.5] indium[sub0.5] phosphorus. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
59 |
| Issue |
2 |
| First Page |
395 |
| Last Page |
398 |
| Subject |
Phosphorus; Gallium; Doping |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition |
| Language |
eng |
| Bibliographic Citation |
Stringfellow, G. B., Hsu, C. C., Yuan, J. S., & Cohen, R. M. (1986). Doping studies of Ga0.5In0.5P organometallic vapor-phase epitaxy. Journal of Applied Physics, 59(2), 395-8. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Stringfellow, G. B., Hsu, C. C., Yuan, J. S., & Cohen, R. M. Applied PHysics Letters. 59(2), 1986 |
| Format Medium |
application/pdf |
| Identifier |
ir-main,11533 |
| ARK |
ark:/87278/s6wd4j19 |
| Setname |
ir_uspace |
| ID |
705860 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6wd4j19 |
