Pulsed EDMR study of charge trapping at Pb centers

Low temperature pulsed electrically detected magnetic resonance (pEDMR) measurements of charge trapping and recombination transitions involving Pb centers at the c-Si (111) /Si02 interface are presented. The results of these experiments show that when a conduction electron is trapped, it forms a strongly coupled spin pair with the defect electron prior to its readjustment into the charged Pb" ground state. The data reveals that the Lande factors of the two electrons within these pairs are almost identical (difference <0.002) and that they are, within the measurement accuracy, identical to the Lande factor of the uncharged, singly occupied Pb center, from % it is concluded that trapping and recombination at Pb defects is dominated by direct charge capture and not by tunneling or hopping transitions from other localized states Different cross anions attributed in previous studies to different interface defects at the c-Si/Si02 interface can be explained by readjustment out of different spin configurations of the charged Pb detect.