| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Su, L.C.; Strausser, Y.E.; Thornton, J.T. |
| Title |
Atomic force microscopy study of ordered GaInP |
| Date |
1995 |
| Description |
Examines the nature of the steps on the surface of gallium indium phosphide lattice layers matched to gallium arsenide substrates using atomic force microscopy. Temperatures of organometallic vapor phase epitaxy used; Relation of height of steps with misorientation angle; Link of supersteps with the degree of order and the microstructure of ordered domains. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
66 |
| Issue |
23 |
| Subject |
Surface chemistry; Lattice theory |
| Subject LCSH |
Surface active agents; Order-disorder in alloys; Epitaxy |
| Language |
eng |
| Bibliographic Citation |
Stringfellow, G.B., Su, L.C., Strausser, Y.E., & Thornton, J.T. (1995). "Atomic force microscopy study of ordered GaInP ." Applied Physics Letters, 66(23), 3155. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in (Stringfellow, G.B., Su, L.C., Strausser, Y.E., & Thornton, J.T., Applied Physics Letters. 66(23), 1995 |
| Format Medium |
application/pdf |
| Identifier |
ir-main,11773 |
| ARK |
ark:/87278/s62j6w88 |
| Setname |
ir_uspace |
| ID |
705177 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s62j6w88 |
