Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Vardeny, Zeev Valentine |
Other Author |
Zhou, T. X.; Tauc, J.; Abeles, B. |
Title |
Steady-state photomodulation spectroscopy of α-Si:H/α-SiNx:H multilayer structures |
Date |
1987-05 |
Description |
The steady-state photomodulation (PM) spectrum and its temperature dependence were studied in α-Si:H/α-SiNx:H multilayer structures (MLS). We found that the photocarrier properties in MLS with Si sublayer thickness ds < 20 A are dominated by band-tail broadening resulting from increase in disorder. The PM spectrum for MLS with ds > 20 A is mainly due to interface-related defects; because of its similarity with the PM spectrum of P-doped α-Si:H we identify the defects as charged dangling bonds. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review B |
Volume |
35 |
Issue |
14 |
First Page |
7767 |
Last Page |
7769 |
DOI |
10.1103/PhysRevB.35.7767 |
citatation_issn |
0163-1829 |
Subject |
Steady-state photomodulation spectroscopy; Photocarrier properties; Amorphous silicon |
Subject LCSH |
Amorphous semiconductors -- Optical properties; Thin films, Multilayered; Thin films, Multilayered -- Optical properties |
Language |
eng |
Bibliographic Citation |
Zhou, T. X., Vardeny, Z. V., Tauc, J., & Abeles, B. (1987). Steady state photomodulation spectroscopy of α-Si:H/α-SiNx:H multilayer structures. Physical Review B: Rapid Communications, 35(14), 7767-9. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.35.7767 |
Format Medium |
application/pdf |
Format Extent |
289,994 bytes |
Identifier |
ir-main,9633 |
ARK |
ark:/87278/s66d6bnf |
Setname |
ir_uspace |
ID |
707083 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s66d6bnf |