Steady-state photomodulation spectroscopy of α-Si:H/α-SiNx:H multilayer structures

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Publication Type Journal Article
School or College College of Science
Department Physics
Creator Vardeny, Zeev Valentine
Other Author Zhou, T. X.; Tauc, J.; Abeles, B.
Title Steady-state photomodulation spectroscopy of α-Si:H/α-SiNx:H multilayer structures
Date 1987-05
Description The steady-state photomodulation (PM) spectrum and its temperature dependence were studied in α-Si:H/α-SiNx:H multilayer structures (MLS). We found that the photocarrier properties in MLS with Si sublayer thickness ds < 20 A are dominated by band-tail broadening resulting from increase in disorder. The PM spectrum for MLS with ds > 20 A is mainly due to interface-related defects; because of its similarity with the PM spectrum of P-doped α-Si:H we identify the defects as charged dangling bonds.
Type Text
Publisher American Physical Society
Journal Title Physical Review B
Volume 35
Issue 14
First Page 7767
Last Page 7769
DOI 10.1103/PhysRevB.35.7767
citatation_issn 0163-1829
Subject Steady-state photomodulation spectroscopy; Photocarrier properties; Amorphous silicon
Subject LCSH Amorphous semiconductors -- Optical properties; Thin films, Multilayered; Thin films, Multilayered -- Optical properties
Language eng
Bibliographic Citation Zhou, T. X., Vardeny, Z. V., Tauc, J., & Abeles, B. (1987). Steady state photomodulation spectroscopy of α-Si:H/α-SiNx:H multilayer structures. Physical Review B: Rapid Communications, 35(14), 7767-9.
Rights Management (c) American Physical Society http://dx.doi.org/10.1103/PhysRevB.35.7767
Format Medium application/pdf
Format Extent 289,994 bytes
Identifier ir-main,9633
ARK ark:/87278/s66d6bnf
Setname ir_uspace
ID 707083
Reference URL https://collections.lib.utah.edu/ark:/87278/s66d6bnf
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