| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Vardeny, Zeev Valentine |
| Other Author |
Tauc, J. |
| Title |
Method for direct determination of the effective correlation energy of defects in semiconductors: optical modulation spectroscopy of dangling bonds |
| Date |
1985-04 |
| Description |
The optical modulation technique is used for direct determination of energy levels and the effective correlation energy U/eff of dangling-bond defects. With an accuracy of 0.1 eV we found for the dangling-bond defect in α-Si:H, f/e f f=0.5 eV; in α-As2S3, £/e f f= - 1.0 eV; in As2Se3, Ueff = -0.7 eV; and in trans-(CH)x, Ueff=0.95 eV. |
| Type |
Text |
| Publisher |
American Physical Society |
| Journal Title |
Physical Review Letters |
| Volume |
54 |
| Issue |
16 |
| First Page |
1844 |
| Last Page |
1847 |
| DOI |
10.1103/PhysRevLett.54.1844 |
| citatation_issn |
0031-9007 |
| Subject |
Dangling bonds; Correlation energy |
| Subject LCSH |
Semiconductors -- Defects; Modulation spectroscopy |
| Language |
eng |
| Bibliographic Citation |
Vardeny, Z., V., & Tauc, J. (1985). Method for direct determination of the effective correlation energy of defects in semiconductors: optical modulation spectroscopy of dangling bonds. Physical Review Letters, 54(16), 1844-7. |
| Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.54.1844 |
| Format Medium |
application/pdf |
| Format Extent |
336,406 bytes |
| Identifier |
ir-main,9598 |
| ARK |
ark:/87278/s6p565n9 |
| Setname |
ir_uspace |
| ID |
703096 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6p565n9 |
