Long-lived spin coherence in silicon with an electrical spin trap readout

Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0 > 8:5 T) and low temperatures (T = 2:8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 μs, 50 times longer than the previous maximum for electrically detected spin readout experiments.