Gallium and thallium NMR study of phase transitions and incomemensurability in the layered semiconductor TlGaSe2

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Publication Type Journal Article
School or College College of Science
Department Physics
Creator Ailion, David Charles
Other Author Panich, A. M.; Kashida, S.; Gasanly, N.
Title Gallium and thallium NMR study of phase transitions and incomemensurability in the layered semiconductor TlGaSe2
Date 2004
Description We report on the first NMR study of phase transitions and incommensurability in the layered semiconductor TlGaSe2. 69,71Ga and 205Tl NMR data from a powder sample show phase transitions at 118, 108 and around 69 K. The 69Ga and 71Ga spin-lattice relaxation times T1 are short and nearly temperature independent in the temperature range 118 to 108 K, which is characteristic of an incommensurate state. The nuclear magnetization recovery in this temperature range can be fit by two components having different time constants. The ratio of the amplitudes of the components varies with temperature. Such behavior is consistent with the coexistence in this temperature range of two different macroscopic domains, such that one of the domains becomes energetically favored on cooling. The phase transition into a ferroelectric phase at 108 K appears to be accompanied by a displacement of Tl atoms.
Type Text
Publisher American Physical Society
Volume 69
First Page 245319-1
Last Page 245319-7
Subject NMR; Atomic motion; Phase transitions; Spin-lattice; Relaxation-time
Subject LCSH Nuclear magnetic resonance; Nuclear physics; Phase transformations (Statistical physics)
Language eng
Bibliographic Citation Panich, A. M., Ailison, D. C., Kashida, S., & Gasanly, N. (2004). Gallium and thallium NMR study of phase transitions and incomemensurability in the layered semiconductor TlGaSe2. Physical Review B, 69, 245319-1-245319-7.
Rights Management (c) American Physical Society
Format Medium application/pdf
Format Extent 170,913 Bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6g73zft
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