Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Han, Y.; Zhu, J. Y.; Li, Shao-Chun; Jia, Jin-Feng; Zhang, Yan-Feng; Xue, Qi-Kun |
Title |
Coulomb sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surfaces |
Date |
2004-09 |
Description |
We propose the concept of a ‘‘Coulomb sink'' to elucidate the effect of Coulomb charging on coarsening of metal mesas grown on semiconductor surfaces.We show that a charged mesa, due to its reduced chemical potential, acts as a Coulomb sink and grows at the expense of neighboring neutral mesas. The theory explains qualitatively the most salient features of coarsening of charged Pb mesas on the Si(111) surface, as observed by a scanning tunneling microscope. It provides a potentially useful method for controlled fabrication of metal nanostructures. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
93 |
Issue |
10 |
DOI |
10.1103/PhysRevLett.93.106102 |
citatation_issn |
0031-9007 |
Subject |
Coulomb sink; Coulomb effect; Metal nanoclusters; Semiconductor surface; Pb mesas |
Subject LCSH |
Coarsening (Chemistry); Surface chemistry |
Language |
eng |
Bibliographic Citation |
Han, Y., Zhu, J. Y., Liu, F., Li, S. C., Jia, J. F., Zhang, Y. F., & Xue, Q. K. (2004). Coulomb sink: a novel Coulomb effect on coarsening of metal nanoclusters on semiconductor surface. Physical Review Letters, 93(10), 106102. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.93.106102 |
Format Medium |
application/pdf |
Format Extent |
603,282 bytes |
Identifier |
ir-main,12169 |
ARK |
ark:/87278/s6ft94g5 |
Setname |
ir_uspace |
ID |
705550 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6ft94g5 |