| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Lee, S.H. |
| Title |
Influence of tellurium doping on step bunching of GaAs (001) vicinal surfaces grown by organometallic vapor phase epitaxy |
| Date |
1998 |
| Description |
Atomic force microscopy has been used to investigate the influence of controlled tellurium Te incorporation on the step structure of GaAs grown by organometallic vapor phase epitaxy on vicinal 001 surfaces. Te doping, using the precursor diethyltelluride, is found to markedly decrease the surface roughness. Step bunching, observed for undoped layers, is totally eliminated. Only monolayer steps are formed for Te concentrations of 4 1017 cm 3. A model is proposed to account for these effects and the results reported previously for GaInP. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
73 |
| Issue |
12 |
| First Page |
1703 |
| Last Page |
1705 |
| Subject |
Epitaxial growth; Misorientation; Organometallic vapor phase epitaxy |
| Subject LCSH |
Atomic force microscopy; Order-disorder in alloys; Epitaxy |
| Language |
eng |
| Bibliographic Citation |
Lee, S.H., & Stringfellow, G.B. (1998). "Influence of tellurium doping on step bunching of GaAs (001) vicinal surfaces grown by organometallic vapor phase epitaxy." Applied Physics Letters, 73(12), 1703-5. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Lee, S.H., & Stringfellow, G.B. , Applied Physicsc Letters, 73(12), 1998 |
| Format Medium |
application/pdf |
| Format Extent |
90,817 bytes |
| Identifier |
ir-main,1935 |
| ARK |
ark:/87278/s6gb2n6m |
| Setname |
ir_uspace |
| ID |
703350 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6gb2n6m |
