Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Bai, Lugang; Yu, Decai; Lu, Guang-Hong; Wang, Q.; Yilmaz, Hamza |
Title |
Confining P diffusion in Si by an As-doped barrier layer |
Date |
2007 |
Description |
The miniaturization of Si-based devices requires control of doping profile, which makes the understanding of dopant interaction and diffusion in Si critical. The authors have studied the effect of As doping on P diffusion in Si using first-principles calculations. The authors found a form of As-vacancy complex is energetically favorable, allowing As to consume the vacancy so as to prohibit the vacancy-mediated P diffusion. Also, in the vicinity of As, the vacancy-mediated P diffusion barrier is increased, decreasing further the P mobility. The results provide useful guidance for designing As-doped barriers to block P diffusion in Si wafer processing and metal oxide semiconductor field-effect transistor device fabrication. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
91 |
Issue |
6 |
First Page |
61926 |
DOI |
10.1063/1.2769392 |
citatation_issn |
36951 |
Subject |
P diffusion; Silicon; Arsenic doping; As-doped barrier; Diffusion control |
Subject LCSH |
Semiconductor doping |
Language |
eng |
Bibliographic Citation |
Bai, L., Yu, D., Lu, G.-H., Liu, F., Wang, Q., & Yilmaz, H. (2007). Confining P diffusion in Si by an As-doped barrier layer. Applied Physics Letters, 91(6), 061926. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Bai, L., Yu, D., Lu, G.-H., Liu, F., Wang, Q., & Yilmaz, H., Applied Physics Letters, 91(6), 2007 and may be found at http://dx.doi.org/10.1063/1.2769392 |
Format Medium |
application/pdf |
Format Extent |
302,651 bytes |
Identifier |
ir-main,12127 |
ARK |
ark:/87278/s60c5cwd |
Setname |
ir_uspace |
ID |
702932 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s60c5cwd |