Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Maxson, J. B.; Savage, D. E.; Tromp, R. M.; Reuter, M. C.; Lagally, M. G. |
Title |
Thermal roughening of a thin film: a new type of roughening transition |
Date |
2000-09 |
Description |
The equilibrium thermal roughening of thin Ge layers (one and two monolayers) deposited on Si(001) has been investigated with low-energy electron microscopy. A Ge-coverage-dependent roughening is observed. For two monolayers, the temperature at which imaging contrast is lost due to surface roughness is 900 ± 25 ◦C, between the roughening temperatures of Ge(001) and Si(001). Lower Ge coverages move this temperature closer to that of Si(001). The roughening is confined to the Ge overlayers. It is believed that this phenomenon represents a new type of surface roughening transition that should be generally applicable for heteroepitaxial films. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
85 |
Issue |
10 |
First Page |
2152 |
Last Page |
2155 |
DOI |
10.1103/PhysRevLett.85.2152 |
citatation_issn |
0031-9007 |
Subject |
Thermal roughening; Roughening transition; Heteroepitaxial growth |
Subject LCSH |
Thin films -- Thermal properties; Surface roughness; Epitaxy |
Language |
eng |
Bibliographic Citation |
Maxson, J. B., Savage, D. E., Tromp, R. M., Reuter, M. C., Liu, F., & Lagally, M. G. (2000). Thermal roughening of a thin film: a new type of roughening transition. Physical Review Letters, 85(10), 2152-5. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.85.2152 |
Format Medium |
application/pdf |
Format Extent |
226,079 bytes |
Identifier |
ir-main,12194 |
ARK |
ark:/87278/s6qj81zj |
Setname |
ir_uspace |
ID |
707434 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6qj81zj |