| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
McCalmont, J. S.; Casey, H. C. Jr.; Wang, T. Y. |
| Title |
Effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yP |
| Date |
1992 |
| Description |
Discusses a study conducted on oxygen-doped, semi-insulating layers of (aluminum-gallium) indium phosphide grown on gallium arsenide using organometallic vapor phase epitaxy. Effect of oxygen doping on semi-insulating layers of the substance; Secondary-ion mass spectrometry measurements; Measured concentration of oxygen in the layers of the substance in samples used in the study. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
71 |
| Issue |
2 |
| First Page |
1046 |
| Last Page |
1048 |
| Subject |
Inactive interstitial atoms; Energy-dispersive spectoscopy; intentional oxygen |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition; Semiconductor doping |
| Language |
eng |
| Bibliographic Citation |
Stringfellow, G. B., McCalmont, J. S., Casey, H. C. Jr., & Wang, T. Y. (1992) Effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yP. Journal of Applied Physics, 71(2), 1046-8. |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Stringfellow, G. B., McCalmont, J. S., Casey, H. C. Jr., & Wang, T. Y., Journal of Applied Physics. 71(2), 1992 |
| Format Medium |
application/pdf |
| Format Extent |
226,636 bytes |
| Identifier |
ir-main,1886 |
| ARK |
ark:/87278/s65q5dr1 |
| Setname |
ir_uspace |
| ID |
707415 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s65q5dr1 |
