Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Vardeny, Zeev Valentine |
Other Author |
Ray, S.; Tauc, J.; Moustakas, T.; Abeles, B. |
Title |
Relaxation of photoinduced sub-bandgap absorption in a-Si:H |
Date |
1981 |
Description |
The decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was studied in the temperature range 80 - 305K, in a-Si:H samples prepared by glow discharge and sputtering. The decay was interpreted in terms of bimolecular diffusion limited recombination involving dispersive transport of electrons and was used for the determination of the dispersion parameter a. It was found to be a linear function of T in the glow-discharge sample while it was weakly T-dependent in the sputtered sample. In addition, a first measurement of the time evolution of the PA spectrum is reported. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Volume |
73 |
First Page |
253 |
Last Page |
257 |
DOI |
10.1063/1.33040 |
citatation_issn |
0094243X |
Subject |
Photoinduced absorption; Sub-bandgap absorption; Glow discharge; Sputtering; Decay |
Subject LCSH |
Amorphous semiconductors; Dye lasers |
Language |
eng |
Conference Title |
AIP Conference Proceedings Volume 73 |
Bibliographic Citation |
Ray, S., Vardeny, Z., Tauc, J., Moustakas, T., & Abeles, B. (1981). Relaxation of photoinduced sub-bandgap absorption in a-Si:H. AIP Conference Proceedings, 73, 253-7. |
Rights Management |
(c)American Institute of Physics. The following article appeared in AIP Conference Proceedings, 73, 1981 and may be found at http://dx.doi.org/10.1063/1.33040 |
Format Medium |
application/pdf |
Format Extent |
3,097,598 bytes |
Identifier |
ir-main,9558 |
ARK |
ark:/87278/s6183qnx |
Setname |
ir_uspace |
ID |
702749 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6183qnx |