Triplet recombination at Pb centers and its implications for capture cross sections

Pulsed electrically detected magnetic resonance measurements are presented showing that Pb centers at the crystalline silicon (c-Sid) (111) to silicon dioxide sSiO2d interface can cause recombination of strongly coupled spin pairs in singlet and triplet configurations. The implication of these findings is that two different electron capture cross sections can exist at a single defect. This shows that the previously observed two capture cross sections at the c-Si/SiO2 interface do not necessarily imply the existence of additional non-Pb-like centers such as oxygen-backbonded silicon dangling bonds.