Relaxation of photoinduced sub-bandgap absorption in a-Si:H

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Publication Type Journal Article
School or College College of Science
Department Physics
Creator Vardeny, Zeev Valentine
Other Author Ray, S.; Tauc, J.; Moustakas, T.; Abeles, B.
Title Relaxation of photoinduced sub-bandgap absorption in a-Si:H
Date 1981
Description The decay of photoinduced sub-bandgap absorption (PA) following pulsed excitation was studied in the temperature range 80 - 305K, in a-Si:H samples prepared by glow discharge and sputtering. The decay was interpreted in terms of bimolecular diffusion limited recombination involving dispersive transport of electrons and was used for the determination of the dispersion parameter a. It was found to be a linear function of T in the glow-discharge sample while it was weakly T-dependent in the sputtered sample. In addition, a first measurement of the time evolution of the PA spectrum is reported.
Type Text
Publisher American Institute of Physics (AIP)
Volume 73
First Page 253
Last Page 257
DOI 10.1063/1.33040
citatation_issn 0094243X
Subject Photoinduced absorption; Sub-bandgap absorption; Glow discharge; Sputtering; Decay
Subject LCSH Amorphous semiconductors; Dye lasers
Language eng
Conference Title AIP Conference Proceedings Volume 73
Bibliographic Citation Ray, S., Vardeny, Z., Tauc, J., Moustakas, T., & Abeles, B. (1981). Relaxation of photoinduced sub-bandgap absorption in a-Si:H. AIP Conference Proceedings, 73, 253-7.
Rights Management (c)American Institute of Physics. The following article appeared in AIP Conference Proceedings, 73, 1981 and may be found at http://dx.doi.org/10.1063/1.33040
Format Medium application/pdf
Format Extent 3,097,598 bytes
Identifier ir-main,9558
ARK ark:/87278/s6183qnx
Setname ir_uspace
ID 702749
Reference URL https://collections.lib.utah.edu/ark:/87278/s6183qnx
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