Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Liu, Feng |
Other Author |
Lu, Guang-Hong; Wang, Q. |
Title |
Role of vacancy on trapping interstitial O in heavily As-doped Si |
Date |
2008 |
Description |
We have investigated the interstitial oxygen (Oi) diffusion in heavily arsenic (As)-doped Si using first-principles calculations. We show that it is not the As per se but the Si vacancy (V) that trap Oi to reduce its diffusion. Arsenic actually plays the role of an arbitrator to activate thermal generation of As-V pairs, which in turn trap Oi with a large binding energy of ~1.0 eV, in quantitative agreement with experiments. Our finding solves a long-standing puzzle on the atomistic mechanism underlying the retardation of Oi precipitation in heavily As-doped Si. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
92 |
Issue |
21 |
First Page |
211906 |
DOI |
10.1063/1.2937308 |
citatation_issn |
36951 |
Subject |
Vacancy; Interstitial oxygen; As-doped Si; Arsenic doped silicon; Oxygen trapping; Oxygen diffusion |
Subject LCSH |
Doped semiconductors |
Language |
eng |
Bibliographic Citation |
Lu, G. H., Wang, Q., & Liu, F. (2008). Role of vacancy on trapping interstitial O in heavily As-doped Si. Applied Physics Letters, 92(21), 211906. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Lu, G. H., Wang, Q., & Liu, F., Applied Physics Letters, 92(21), 2008 and may be found at http://dx.doi.org/10.1063/1.2937308 |
Format Medium |
application/pdf |
Format Extent |
200,135 bytes |
Identifier |
ir-main,12117 |
ARK |
ark:/87278/s6h710cw |
Setname |
ir_uspace |
ID |
706424 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6h710cw |