Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Tiwari, Ashutosh |
Other Author |
Jin, Chunming; Kvit, A.; Narayan, J. |
Title |
Growth of epitaxial ZnO films on Si(111) |
Date |
2002 |
Description |
Epitaxial ZnO films have been grown on Si(l 11) substrates by employing a A1N buffer layer during a pulsed laser-deposition process. The epitaxial structure of A1N on Si(l 11) substrate provides a template for ZnO growth. The resultant films are evaluated by transmission electron microscopy, x-ray diffraction, and electrical measurements. The results of x-ray diffraction and electron microscopy on these films clearly show the epitaxial growth of ZnO films with an orientational relationship of ZnO[0001]||Aln[0001]||Si[l 11] along the growth direction and ZnO[2 I I 0]||A1N[2 I I 0]||Si[0 I I] along the in-plane direction. High electrical conductivity (103 S/m at 300 K) and a linear I-V characteristics make these epitaxial films ideal for microelectronic, optoelectronic, and transparent conducting oxide applications. |
Type |
Text |
Publisher |
Materials Research Society |
Volume |
722 |
First Page |
305 |
Last Page |
310 |
Subject |
Buffer layers; Aluminum nitride; Silicon substrate |
Subject LCSH |
Zinc oxide; Thin films; Diffusion coatings; Epitaxy; Diluted magnetic semiconductors |
Language |
eng |
Bibliographic Citation |
Jin, C., Tiwari, A., Kvit, A., & Narayan, J. (2002). Growth of epitaxial ZnO films on Si(111). MRS Proceedings, 722, 305-10. |
Rights Management |
© Materials Research Society http://www.mrs.org/ |
Format Medium |
application/pdf |
Format Extent |
1,984,179 bytes |
Identifier |
ir-main,12096 |
ARK |
ark:/87278/s6gm8rnq |
Setname |
ir_uspace |
ID |
704811 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6gm8rnq |