Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Materials Science & Engineering |
Creator |
Tiwari, Ashutosh |
Other Author |
Jin, C.; Kumar, D.; Narayan, J. |
Title |
Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure |
Date |
2003 |
Description |
We have fabricated a p - n junction, consisting of p-type manganite (La0.7Sr0.3MnO3) and n-type ZnO layers grown on sapphire substrate. This junction exhibits excellent rectifying behavior over the temperature range 20-300 K. Electrical characteristics of La0.7Sr0.3MnO3 (LSMO) film in this heterostructure are found to be strongly modified by the built-in electric field at the junction. It has been shown that by applying the external bias voltage, the thickness of the depletion layer, and hence, the electrical and magnetic characteristics of LSMO film can precisely be modified. |
Type |
Text |
Publisher |
American Institute of Physics (AIP) |
Journal Title |
Applied Physics Letters |
Volume |
83 |
Issue |
9 |
First Page |
1773 |
Last Page |
1775 |
DOI |
10.1063/1.1605801 |
citatation_issn |
36951 |
Subject |
Manganites |
Subject LCSH |
Zinc oxide; Thin films; Semiconductor doping; Semiconductors -- Junctions; Magnetoresistance; Manganese oxides -- Electric properties; Manganese oxides -- Magnetic properties |
Language |
eng |
Bibliographic Citation |
Tiwari, A., Jin, C., Kumar, D., & Narayan, J. (2003). Rectifying electrical characteristics of La0.7Sr0.3MnO3/Zno heterostructure. Applied Physics Letters 83(9), 1773-5. |
Rights Management |
(c)American Institute of Physics. The following article appeared in Tiwari, A., Jin, C., Kumar, D., & Narayan, J., Applied Physics Letters, 83(9), 2003 and may be found at http://dx.doi.org/10.1063/1.1605801 |
Format Medium |
application/pdf |
Format Extent |
197,013 bytes |
Identifier |
ir-main,12079 |
ARK |
ark:/87278/s65h80mb |
Setname |
ir_uspace |
ID |
704769 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s65h80mb |