Publication Type |
Journal Article |
School or College |
College of Engineering |
Department |
Electrical & Computer Engineering; Materials Science & Engineering |
Creator |
Stringfellow, Gerald B.; Sadwick, Laurence P. |
Other Author |
Hill, C. W. |
Title |
Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds |
Date |
1994 |
Description |
The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pressure conditions, of three alternative phosphorous precursors: tertiarybutylphosphine (TBP), bisphosphinoethane (BPE) and trisdimethylaminophosphorous (TDMAP). |
Type |
Text |
Publisher |
Institute of Electrical and Electronics Engineers (IEEE) |
Subject |
Chemical Beam Epitaxy; CBE |
Subject LCSH |
Phosphine; Phosphorus compounds; Crystal growth |
Language |
eng |
Bibliographic Citation |
Hill, C. W., Stringfellow, G. B., & Sadwick, L. P. (1994). Low pressure pyrolysis of alternatep hosphorus precursors for chemical beam epitaxial growth of InP and related compounds. Proceedings of InP and Related Compounds. |
Rights Management |
(c) Institute of Electrical and Electronics Engineers (IEEE) |
Format Medium |
application/pdf |
Format Extent |
207,996 Bytes |
Identifier |
ir-main,582 |
ARK |
ark:/87278/s69z9p30 |
Setname |
ir_uspace |
ID |
703472 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s69z9p30 |