Publication Type |
Journal Article |
School or College |
College of Science |
Department |
Physics |
Creator |
Boehme, Christoph |
Other Author |
Morley, G. W.; McCamey, D. R.; Seipel, H. A.; Brunel, L.-C.; van Tol, J. |
Title |
Long-lived spin coherence in silicon with an electrical spin trap readout |
Date |
2008-11 |
Description |
Pulsed electrically detected magnetic resonance of phosphorous (31P) in bulk crystalline silicon at very high magnetic fields (B0 > 8:5 T) and low temperatures (T = 2:8 K) is presented. We find that the spin-dependent capture and reemission of highly polarized (>95%) conduction electrons by equally highly polarized 31P donor electrons introduces less decoherence than other mechanisms for spin-to-charge conversion. This allows the electrical detection of spin coherence times in excess of 100 μs, 50 times longer than the previous maximum for electrically detected spin readout experiments. |
Type |
Text |
Publisher |
American Physical Society |
Journal Title |
Physical Review Letters |
Volume |
101 |
Issue |
20 |
DOI |
10.1103/PhysRevLett.101.207602 |
citatation_issn |
0031-9007 |
Subject |
Spin coherence |
Subject LCSH |
Amorphous silicon; Semiconductor doping; Phosphorus; Magnetic resonance |
Language |
eng |
Bibliographic Citation |
Morley, G. W., McCamey, D. R., Seipel, H. A., Brunel, L.-C., van Tol, J., & Boehme, C. (2008). Long-lived spin coherence in silicon with an electrical spin trap readout. Physical Review Letters, 101, 207602. |
Rights Management |
(c) American Physical Society http://dx.doi.org/10.1103/PhysRevLett.101.207602 |
Format Medium |
application/pdf |
Format Extent |
432,689 bytes |
Identifier |
ir-main,11954 |
ARK |
ark:/87278/s62n5ksx |
Setname |
ir_uspace |
ID |
705935 |
Reference URL |
https://collections.lib.utah.edu/ark:/87278/s62n5ksx |