| Publication Type |
Journal Article |
| School or College |
College of Engineering |
| Department |
Electrical & Computer Engineering; Materials Science & Engineering |
| Creator |
Stringfellow, Gerald B. |
| Other Author |
Jun, S.W.; Lee, R.T.; Fetzer, C.M.; Shurtleff, J.K.; Choi, C.J.; Seong, T.Y. |
| Title |
Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy |
| Date |
2000 |
| Description |
Studies the effect of the surfactant bismuth on the ordering and surface structure in GaInP layers grown by organometallic vapor phase epitaxy. Disordering caused by the addition of bismuth during growth; Changes in surface structure occurring with the disordering. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
88 |
| Issue |
7 |
| Subject |
Thin films, Multilayered; Bismuth |
| Subject LCSH |
Epitaxy; Metal organic chemical vapor deposition; Surface active agents |
| Language |
eng |
| Bibliographic Citation |
Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., & Seong, T.Y. (2000). "Bi surfactant control of ordering and surface structure in GaInP grown by organometallic vapor phase epitaxy." Journal of Applied Physics, 88(7), 4429 |
| Rights Management |
(c)American Institute of Physics. The following article appeared in Jun, S.W., Lee, R.T., Fetzer, C.M., Shurtleff, J.K., Stringfellow, G.B., Choi, C.J., & Seong, T.Y., Journal of Applied Physics. 88(7), 2000 |
| Format Medium |
application/pdf |
| Identifier |
ir-main,11743 |
| ARK |
ark:/87278/s6f76wqd |
| Setname |
ir_uspace |
| ID |
703182 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s6f76wqd |
