| Publication Type |
Journal Article |
| School or College |
College of Science |
| Department |
Physics |
| Creator |
Vardeny, Zeev Valentine |
| Other Author |
Pfost, D.; Liu, Hsian-na; Tauc, J. |
| Title |
Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H |
| Date |
1984 |
| Description |
The steady state subgap photoinduced absorpotion bands in a-Ge:H and a-Si:H are interpreted in terms of two kinds of optical transitions of photoexcited carriers from traps in the gap into the bands of which one produces absorption and the other produces bleaching. The photoinduced absorption in microcrystalline Si:H is due to free carriers in the crystalline grains whose recombination is dominated by the surrounding amorphous matrix. |
| Type |
Text |
| Publisher |
American Institute of Physics (AIP) |
| Volume |
120 |
| First Page |
1 |
| Last Page |
7 |
| DOI |
10.1063/1.34741 |
| Subject |
Photoinduced absorption; Si:H; Ge:H; Amorphous silicon; Amorphous germanium; Microcrystalline silicon |
| Subject LCSH |
Amorphous semiconductors -- Optical properties |
| Language |
eng |
| Bibliographic Citation |
Vardeny, Z. V., Pfost, D., Liu, H., & Tauc, J. (1984). Photoinduced absorption spectra in amorphous Si:H and Ge:H and microcrystalline Si:H. AIP Conference Proceedings, 120, 1-7. |
| Rights Management |
©American Institute of Physics. The following article appeared in Vardeny, Z. V., Pfost, D., Liu, H., & Tauc, J., AIP Conference Proceedings, 120, 1984 and may be found at http://dx.doi.org/10.1063/1.34741 |
| Format Medium |
application/pdf |
| Format Extent |
313,992 bytes |
| Identifier |
ir-main,9591 |
| ARK |
ark:/87278/s66h51pt |
| Setname |
ir_uspace |
| ID |
703792 |
| Reference URL |
https://collections.lib.utah.edu/ark:/87278/s66h51pt |
