| Description |
This paper describes a technique for nondestructive measurement of dielectric properties of thin substrate materials used in microwave integrated circuits and devices. The method involves reflection measurements on a coaxial transmission line terminated by a small shunt capacitance. The unique sample holder configuration presented requires only minimal preparation of a very small sample. Techniques are described for performing measurements in both the frequency- and time-domains. Experimental results are presented for measurements performed on silicon, gallium arsenide and sapphire samples at frequencies from 0.2 GHz to 10 GHz. Advantages and limitations of the method are discussed. This project was done in conjunction with an 'Engineering Clinic' sponsored by the Hewlett-Packard Corporation, Network Measurement Division, Santa Rosa, California. |
