Investigation: The effect of temperature on the thin film formation of copper-arsenic doped silicon

Update Item Information
Publication Type honors thesis
School or College College of Science
Department Physics & Astronomy
Thesis Supervisor P. Craig Taylor
Honors Advisor/Mentor Robert R. Kadesh
Creator Dolan, Elizabeth Astill
Title Investigation: The effect of temperature on the thin film formation of copper-arsenic doped silicon
Date 1997-08
Year graduated 1997
Description The explosion of solid state electronics in the past few decades is based upon the discovery of semiconductors. Traditional semiconductors are based upon silicon (or germanium) with controlled amounts impurities added. This research focuses on the formation of such a semiconductor. Thin films of an arsenic-copper blend onto a substrate of silicon were formed using the sputtering technique. The relationship between the thickness of the resulting film and the temperature of the substrate was investigated.
Type Text
Publisher University of Utah
Subject Semiconductor films; Sputtering (Physics)
Language eng
Rights Management (c) Elizabeth Astill Dolan
Format Medium application/pdf
ARK ark:/87278/s62k0bsf
Setname ir_htca
ID 1307535
Reference URL https://collections.lib.utah.edu/ark:/87278/s62k0bsf