Investigation: The effect of temperature on the thin film formation of copper-arsenic doped silicon

The explosion of solid state electronics in the past few decades is based upon the discovery of semiconductors. Traditional semiconductors are based upon silicon (or germanium) with controlled amounts impurities added. This research focuses on the formation of such a semiconductor. Thin films of an arsenic-copper blend onto a substrate of silicon were formed using the sputtering technique. The relationship between the thickness of the resulting film and the temperature of the substrate was investigated.