| Description |
The terahertz (THz) frequency range is a region of the electromagnetic spectrum where both electrical and optical phenomena are significant. This spectral region is attractive for a myriad of applications such as communications, security, molecular recognition, and medical imaging, among many others. The multiple application possibilities of THz technology have motivated intense research in THz optoelectronic devices in a quest to close the so-called THz gap. However, drift/diffusion transport in traditional electronic devices sets an upper limit on its frequency of operation; hence, obtaining solid state devices efficiently operating at THz frequencies has proven challenging. In this context, alternative transport mechanisms such as plasmons and resonant tunneling in III-Nitride semiconductors have emerged as promising alternatives towards THz operation. In this dissertation, I discuss my work in terms of THz characterization of III-Nitride heterostructures, numerical simulation of resonant tunneling devices, as well as my experimental work in terms of efficient plasmon excitation in this materials system. Furthermore, in a more general form, I also discuss how dielectric patterning can be used as a means to enhance the light-matter interaction in two-dimensional electron gases and lead to field enhancement as well as perfect terahertz absorption in optimized geometries. This finding can have multiple important applications in devices such as THz detectors. |
