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Creator | Title | Description | Subject | Date |
226 |
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Ostafin, Agnes | Combined deletion of mouse dematin-headpiece and ß-adducin exerts a novel effect on the spectrin-actin junctions leading to erythrocyte fragility and hemolytic Anemia | Dematin and adducin are actin-binding proteins of the erythrocyte "junctional complex." Individually, they exert modest effects on erythrocyte shape and membrane stability, and their homologues are expressed widely in non-erythroid cells. Here we report generation and characterization of double knoc... | | 2007 |
227 |
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Pugmire, Ronald J. | Soot formation during coal pyrolysis | Soot can be found in almost all combustion and pyrolysis systems. In a coal system, the impact of soot on coal combustion can be identified in two ways. First, soot particles suspended in the combustion flame significantly enhance radiative heat transfer near the burner due to their large surface ar... | | 2001 |
228 |
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Scarpulla, Michael | Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs | We present a systematic investigation on the formation of the highly mismatched alloy GaNxAs1-x using N1-implantation followed by a combination of pulsed laser melting and rapid thermal annealing. Thin films of GaNxAs1-x with x as high as 0.016 and an activation efficiency of the implanted N up to 5... | Highly mismatched alloys; Gallium arsenide | 2003 |
229 |
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Stringfellow, Gerald B. | Electron mobility in AlxGa1-xAs | he electron mobility in AlxGa1-xAs grown by several techniques has been studied to determine whether VPE layers are more highly compensated than comparable LPE layers. The techniques used to grow layers included (1) organometallic VPE using Al(CH3)3, AsH3, and Ga(C2H5)3 or Ga(CH3)3, (2) ''hybrid'' o... | Alloys; Organometallics | 1979-06 |
230 |
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Stringfellow, Gerald B.; Rieth, Loren W. | Effects of Br and Cl on organometallic vapor phase epitaxial growth and ordering in GaInP | CuPt ordering in GaInP has significant effects on the electrical and optical properties. In fact, band gap reductions as large as 160 meV are potentially useful for devices. Thus, control of ordering is important. This has led to the investigation of surfactants that affect the surface processes d... | Band gap reductions; Surfactants; Surface processes | 2004 |
231 |
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Stringfellow, Gerald B.; Cohen, Richard M. | Organometallic vapor phase epitaxial growth of high purity GaInAs using trimethylindium | Gax In1−xAs lattice matched to the InP substrate (x=0.47) has been grown by organometallic vapor phase epitaxy using trimethylindium (TMIn) and trimethylgallium (TMGa) as the group III sources and AsH3 as the As source. In a simple, horizontal, atmospheric pressure reactor, the GaInAs growth proce... | Electron mobilities; Photouminescience; Fabricate modulation | 1984-03-01 |
232 |
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Liu, Feng | Self-organized nanoscale pattern formation on vicinal Si(111) surfaces via a two-stage faceting transition | We demonstrate a self-organized pattern formation on vicinal Si(111) surfaces that are miscut toward the [211] direction. All the patterns, consisting of a periodic array of alternating (7 X 7) reconstructed terraces and step-bunched facets, have the same periodicity and facet structure, independent... | Vicinal Si(111); Nanoscale pattern formation; Two-stage; Faceting transition | 2002-02 |
233 |
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Liu, Feng | Magnetism and local order II: self-consistent cluster calculations | The effect of the local environment on the magnetic moment and its convergence to bulk value has been studied self-consistently by using a molecular-cluster model within the framework of spin-density-functional theory. We show that the magnetic moment of the central atom in clusters of 43 Ni atoms a... | Local order; Magnetic moment; Molecular-cluster model; Spin-density-functional theory | 1989-07 |
234 |
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Stringfellow, Gerald B.; Sadwick, Laurence P. | Low pressure pyrolysis of alternate phosphorus precursors for chemical beam epitaxial growth of InP and related compounds | The most widely used phosphorous source in chemical beam epitaxy (CBE) is phosphine (PH3). However, because it is highly toxic, alternatives to phosphine have been sought for the growth of phosphorous-containing compounds. We have investigated the pyrolysis rates and reaction products, in low pres... | Chemical Beam Epitaxy; CBE | 1994 |
235 |
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Stringfellow, Gerald B. | Effect of surfactant Sb on carrier lifetime in GaInP epilayers | Samples of Ga0.52In0.48P grown on (001) GaAs with small amounts of surfactant Sb were investigated using time-resolved photoluminescence. All samples show a luminescence that may be fit to a two-stage exponential decay with a fast and a slow lifetime. For growth without Sb (Sb/III(v)(0), the sample ... | Semiconductor ternary alloys; Epitaxial layer; Microstructures | 2002-01-01 |
236 |
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Liu, Feng | Towards quantitative understanding of formation and stability of Ge hut islands on Si(001) | We analyze Ge hut island formation on Si(001), using first-principles calculations of energies, stresses, and their strain dependence of Ge/Si(105) and Ge/Si(001) surfaces combined with continuum modeling. We give a quantitative assessment on strain stabilization of Ge(105) facets, estimate the cr... | Ge hut islands; Si(001); First-principles calculations; Heteroepitaxial growth | 2005-05 |
237 |
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Stringfellow, Gerald B. | Effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yP | Discusses a study conducted on oxygen-doped, semi-insulating layers of (aluminum-gallium) indium phosphide grown on gallium arsenide using organometallic vapor phase epitaxy. Effect of oxygen doping on semi-insulating layers of the substance; Secondary-ion mass spectrometry measurements; Measured co... | Inactive interstitial atoms; Energy-dispersive spectoscopy; intentional oxygen | 1992 |
238 |
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Liu, Feng | Thermal roughening of a thin film: a new type of roughening transition | The equilibrium thermal roughening of thin Ge layers (one and two monolayers) deposited on Si(001) has been investigated with low-energy electron microscopy. A Ge-coverage-dependent roughening is observed. For two monolayers, the temperature at which imaging contrast is lost due to surface roughness... | Thermal roughening; Roughening transition; Heteroepitaxial growth | 2000-09 |
239 |
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Liu, Feng | Enhanced growth instability of a strained film on wavy substrate | We demonstrate that the growth of a strained film is inherently less stable on a wavy substrate than on a flat substrate. For small surface undulation, the lowest strain energy state is for the film surface to adopt the same wavelength as the substrate surface in an antiphase configuration at the ea... | Growth instability; Strained film; Wavy substrate; Strain induced self-assembly | 2008 |
240 |
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Stringfellow, Gerald B. | Te doping of GaInP: ordering and step structure | The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is es... | Epitaxial growth; Heterostructures; Growth parameters | 1999-04-01 |
241 |
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Scarpulla, Michael | Effect of film thickness on the incorporation of Mn interstitials in Ga1-xMnxAs | We have investigated the effect of film thickness on the distribution of Mn atoms at various lattice sites in Ga1−xMnxAs thin films. We find that the growth surface acts as a sink facilitating the outdiffusion of Mn interstitials sMnId, and thus reducing its concentration in the film. The outdiffu... | Interstitials; Gallium arsenide | 2005 |
242 |
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Stringfellow, Gerald B. | Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInP | Substrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. In situ surface photoabsorption SPA measurements were used to measure the concentration of 1 10-oriented P dimers, characteristic of the 2 4 reconstructed surface, as a functio... | P-dimer concentration; Photoluminescence measurements; Surface reconstruction | 1996-04-15 |
243 |
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Stringfellow, Gerald B. | GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy | Ga1-xlnx As1-ySby alloys have been grown by organometallic vapor phase epitaxy using trimethyl compounds of Ga, In, As, and Sb(TMGa, TMIn, TMAs, and TMSb) plus AsH3 in an atmospheric pressure, horizontal, infrared heated reactor. For the first time, alloys near the center of the region of solid immi... | Organometallic; Alloys; Vapor phase epitaxy | 1986 |
244 |
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Liu, Feng | Magnetization on vicinal ferromagnetic surfaces | Using Ising model Monte Carlo simulations, we show a strong dependence of surface magnetization on surface miscut angle. For ferromagnetic surfaces, when surface spin exchange coupling is larger than that of the bulk, the surface magnetic ordering temperature decreases, toward the bulk Curie tempera... | Vicinal ferromagnetic surfaces; Surface magnetization; Surface miscut angle | 1997 |
245 |
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Tiwari, Ashutosh | Band-gap engineering of Zn1-xGaxO nanopowders: synthesis, structural and optical characterizations | We report the preparation and detailed structural and optical characterizations of single phase gallium doped ZnO nanopowders. A low temperature solution-based technique was developed to synthesize high-purity Zn1−xGaxO (x:0-0.05) nanopowders. Structural and optical characterization experiments we... | Zinc gallium oxide; ZnGaO; Nanopowders; Band-gap engineering | 2008 |
246 |
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Tiwari, Ashutosh | Epitaxial growth of ZnO films on Si(111) | In this paper, we report the growth of ZnO films on silicon substrates using a pulsed laser deposition technique. These films were deposited on Si(111) directly as well as by using thin buffer layers of AlN and GaN. All the films were found to have c-axis-preferred orientation aligned with normal to... | Buffer layers; Aluminum nitride; Silicon substrate; Biaxial strain | 2002 |
247 |
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Tiwari, Ashutosh | Electron tunneling experiments on La0.7A0.3MnO3 (A=Ca, Sr, Ba) | Tunneling conductance measurements of the electronic density of states of perovskite manganates, La0.7A0.3MnO3 are reported. Tunneling data of all the samples show a zero-bias anomaly with a minimum in the density of states at the Fermi level. This behavior is interpreted as arising from strong elec... | Perovskite manganates; Tunneling conductance | 1999-10 |
248 |
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Stringfellow, Gerald B. | Control and characterization of ordering in GaInP | Gae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs substrates with [llO]-oriented grooves on the surface that have an important effect on the formation of Cu-Pt ordered structures during growth. In this work, the groove shape is demonstrated to be critically important... | Vapor phase epitaxy; Ordered structure; Cathodoluminescence spectroscopy | 1993-06-28 |
249 |
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Bedrov, Dmitro; Smith, Grant D. | Exploration of conformational phase space in polymer melts: a comparison of parallel tempering and conventional molecular dynamics simulations | Parallel tempering molecular dynamics simulations have been performed for 1,4-polybutadiene polymer melts in the 323 K-473 K temperature domain at atmospheric pressure. The parallel tempering approach provides a vast improvement in the equilibration and sampling of conformational phase space for ... | Polymer melts; 1,4-polybutadiene; Conformational phase space; Parallel tempering | 2001 |
250 |
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Scarpulla, Michael | Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/AlxGa1-xAs as a model system | Utilizing three-terminal tunnel emission of ballistic electrons and holes in a planar tunnel transistor with a Mott-barrier collector, we have developed a method to self-consistently determine the energy gap of a semiconductor and band discontinuities at a semiconductor heterojunction without using... | | 2010-06 |