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CreatorTitleDescriptionSubjectDate
1 Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratioPhotoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are employed to investigate single heterostructures based on two GaInP2 layers that have the same composition but different degrees of order on the cation sublattice. Four sample configurations are studied: two complemen...Heterostructures; Growth parameters; Growth temperature1997
2 Spatial mapping of ordered and disordered domains of GaInP by near-field scanning optical microscopy and scanning capacitance microscopyImaging of topography, locally induced photoluminescence and Fermi-level pinning in adjacent ordered and disordered domains on a cleaved GaInP sample is performed using a near-field scanning optical microscope and scanning capacitance microscope at room temperature in air. Highly localized photolumi...Gallium Phosphides; Surface Structure; Photoluminescence1996-04-13
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