Filters: Publisher:"American Institute of Physics (AIP)" Collection:"ir_uspace" Subject:"Growth parameters"
1 - 25 of 2
Number of results to display per page
| Title | Creator | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |  | Te doping of GaInP: ordering and step structure | Stringfellow, Gerald B. | The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is es... | Epitaxial growth; Heterostructures; Growth parameters | 1999-04-01 |
| 2 |  | Characterization of unicompositional GaInP2 ordering heterostructures grown by variation of V/III ratio | Stringfellow, Gerald B.;Inglefield, Colin E.;Taylor, P. Craig | Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopies are employed to investigate single heterostructures based on two GaInP2 layers that have the same composition but different degrees of order on the cation sublattice. Four sample configurations are studied: two complemen... | Heterostructures; Growth parameters; Growth temperature | 1997 |
1 - 25 of 2