Filters: Publisher:"American Institute of Physics (AIP)" Collection:"ir_uspace" Department:"Electrical & Computer Engineering"
| Title | Creator | Description | Subject | Date | ||
|---|---|---|---|---|---|---|
| 1 |  | Plasma-assisted atomic layer deposition of Al2O3 and parylene C bi-layer encapsulation for chronic implantable electronics | Rieth, Loren W | Encapsulation of biomedical implants with complex three dimensional geometries is one of the greatest challenges achieving long-term functionality and stability. This report presents an encapsulation scheme that combines Al2O3 by atomic layer deposition with parylene C for implantable electronic sys... | 2012-01-01 | |
| 2 |  | Quantum wells due to ordering in GaInP | Stringfellow, Gerald B.; Inglefield, Colin E.; Taylor, P. Craig | CuPt ordering results in a reduction of the band-gap energy of GaInP. Thus, heterostructures and quantum wells can be produced by simply varying the order parameter, without changing the solid composition. Changes in the order parameter can be induced by changes in growth conditions. The disorder... | Band-gap energy; Growth temperature; Quantum wells | 1998-12-28 |
| 3 |  | Radiative pair transitions in p-type ZnSe:Cu crystals | Stringfellow, Gerald B. | Shallow levels with an ionization energy of 0.012 eV play an important role in the photoelectronic properties of p-type ZnSe:Cu crystals. These levels exhibit the characteristics of the higher-lying member of an imperfection pair involved in luminescence emission, as well as of a trap determining lo... | Ionization energy; Luminescence emission; Crystals | 1968 |
| 4 |  | Nonequilibrium composition profiles of alloy quantum dots and their correlation with the growth mode | Stringfellow, Gerald B. | Equilibrium composition profiles (CPs) of epitaxial alloy quantum dots (QDs) are well established theoretically. However nonequilibrium CPs may occur experimentally. Using an atomistic-strain-model Monte Carlo simulation method, we demonstrate a striking correlation between the nonequilibrium CPs of... | 2011 | |
| 5 |  | Heterostructures in GaInP grown using a change in Te doping | Stringfellow, Gerald B.; Shurtleff, James Kevin | In organometallic vapor phase epitaxy, changes in growth conditions can be used to modulate the extent of CuPt ordering and, hence, the band gap energy of GaInP. One method is to add Te during growth. An increase in the band gap energy of 0.1 eV due to a decrease in ordering has been obtained by ... | Heterostructures; Alloys | 2000 |
| 6 |  | Heterostructures in GaInP grown using a change in V/III ratio | Stringfellow, Gerald B. | A natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spontaneously during organometallic vapor phase epitaxial OMVPE growth of Ga0.52In0.48P. The extent of this ordering process is found to be a strong function of the input partial pressure of the phosphorus precursor dur... | Superlattices; Alloys; Atomic ordering; Heterostructures | 1997-02-24 |
| 7 |  | High speed wafer scale bulge testing for the determination of thin film mechanical properties | Rieth, Loren W; Solzbacher, Florian | A wafer scale bulge testing system has been constructed to study the mechanical properties of thin films and microstructures. The custom built test stage was coupled with a pressure regulation system and optical profilometer which gives high accuracy three-dimensional topographic images collected on... | 2010 | |
| 8 |  | Use of Nitrogen to disorder GaInP | Stringfellow, Gerald B. | Significant changes in microstructure, surface structure, and alloy composition have been observed in GaInP with the addition of nitrogen. These effects occur due to surface changes induced by small concentrations of nitrogen. Transmission electron microscopy and photoluminescence experiments indica... | Nitrogen; Alloys; Transmission | 2004 |
| 9 |  | Use of surfactant Sb to induce triple period ordering in GaInP | Stringfellow, Gerald B.; Shurtleff, James Kevin | A surfactant is used to induce an ordered structure in an epitaxial layer. The addition of small amounts of triethylantimony during the organometallic vapor phase epitaxy growth of GaInP on 001 GaAs substrates is shown to remove CuPt ordering with a resultant increase in band gap energy. Increasi... | Organometallic; Thermodynamics; Surfactant | 2000-03-13 |
| 10 |  | Photoluminescence of Shallow Acceptors in Epitaxial AlGaAs | Stringfellow, Gerald B. | The low-temperature (2 K) photoluminescence (PL) of AlxGa1-xAs (0<x<0.25 was studied in an effort to characterize shallow acceptors in material grown by organometallic vapor phase epitaxy and liquid phase epitaxy techniques. The dominant shallow acceptor in nominally undoped AlxGa1-xAs specimens gro... | Photoluminescence; Acceptors; Doping | 1980 |
| 11 |  | Surface photo-absorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy | Stringfellow, Gerald B. | The surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An absorption peak due to P dimers on Ga0.52In0.48P was observed at 400 nm, shorter than for InP (430 nm). From comparison with results for GaAs and InP, the data are interpreted to indicate that at a tertiarybutylphos... | Absorption peak; Ordering; Substrate orientation | 1995 |
| 12 |  | Surface photoabsorption study of the effect of substrate misorientation on ordering in GaInP | Stringfellow, Gerald B. | Substrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. In situ surface photoabsorption SPA measurements were used to measure the concentration of 1 10-oriented P dimers, characteristic of the 2 4 reconstructed surface, as a functio... | P-dimer concentration; Photoluminescence measurements; Surface reconstruction | 1996-04-15 |
| 13 |  | Surface photoabsorption study of the effect of V/III ratio on ordering in GaInP | Stringfellow, Gerald B. | Cu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The degree of order is a strong function of the input partial pressure of the phosphorus precursor, i.e., the V/III ratio, during growth. By observing the surface structure using in situ surface p... | Degree of order; Photoluminescence; Transmission electron microscopy | 1996 |
| 14 |  | Surface photoabsorption study of the effects of growth temperature and V/III ratio on ordering in GaInP | Stringfellow, Gerald B. | Surface photoabsorption (SPA) measurements were used to clarify the Cu-Pt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The Cu-Pt ordering is strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e., the V/II... | P-dimer concentration; Oriented phosphorus dimers; Surface reconstruction | 1996-05-01 |
| 15 |  | Surface photoabsorption transients and ordering in GaInP | Stringfellow, Gerald B. | Heterostructures and quantum wells can be produced in GaInP without changing the solid composition by simply varying the order parameter. Since CuPt ordering reduces the band-gap energy, changes in the order parameter induced by changes in growth conditions result in heterostructures with band-ga... | Order parameters; Quantum wells; P-dimers | 1998-03-15 |
| 16 |  | Surfactant controlled growth of GaInP by organometallic vapor phase epitaxy | Stringfellow, Gerald B. | The effect of the surfactant Sb has been studied for GaInP semiconductor alloys grown by organometallic vapor phase epitaxy. Dramatic changes in the optical and electrical properties of GaInP with CuPt ordering have been observed. A small concentration of triethylantimony TESb in the vapor is fou... | Semiconductors; Surface active agents | 2000 |
| 17 |  | Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy | Stringfellow, Gerald B.; Shurtleff, James Kevin | Recently, the addition of the isoelectronic surfactant Sb during organometallic vapor phase epitaxy (OMVPE) of GaInP was shown to eliminate ordering, resulting in a significant change in the band gap energy. These results suggest that surfactants added during growth could have profound affects on ot... | Gallium arsenide; Surfactants; Semiconductors | 2001 |
| 18 |  | Te doping of GaInP: ordering and step structure | Stringfellow, Gerald B. | The donor Te has been added to GaInP during organometallic vapor phase epitaxial growth using the precursor diethyltelluride. In agreement with previous studies, the addition of high Te concentrations leads to the elimination of the CuPt ordering observed in undoped layers. The degree of order is es... | Epitaxial growth; Heterostructures; Growth parameters | 1999-04-01 |
| 19 |  | Step structure and ordering in GaInP | Stringfellow, Gerald B. | Presents information from an experiment on the step structure and ordering in GalnP. Information on the step spacing and degree of order in the epitaxial layers; Details on the experiment; Results from the experiment. | Physics; Ordering; Steps | 1998 |
| 20 |  | Step structure and ordering in Te-doped GaInP | Stringfellow, Gerald B. | The step structure and CuPt ordering in GaInP layers grown by organometallic vapor phase epitaxy on singular GaAs substrates have been investigated as a function of Te (DETe) doping using atomic force microscopy, and electrical and optical properties measurements. The degree of order decreases for T... | Surfaces; Te doping; Bandgap energy | 1998 |
| 21 |  | Step structure and ordering in Zn-doped GaInP | Stringfellow, Gerald B. | Presents the results of a study of Zinc dopant effects on both step structure and ordering in GaInP in an effort to further clarify the disordering mechanism. Comparison of the results obtained for Zinc with those reported for tellurium; Experiment; Results; Discussion; Conclusion. | Gallium Compounds; Zinc; Ordering | 1999 |
| 22 |  | Effect of growth rate on step structure and ordering in GaInP | Stringfellow, Gerald B. | CuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic vapor phase epitaxy. The formation of this spontaneously ordered structure during epitaxial growth is intimately related to the atomic-scale physical processes occurring on the surface, specifically surface reconst... | Atomic force microscopy; Organometallic vapor phase; Crystallographic plane | 1997 |
| 23 |  | Effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yP | Stringfellow, Gerald B. | Discusses a study conducted on oxygen-doped, semi-insulating layers of (aluminum-gallium) indium phosphide grown on gallium arsenide using organometallic vapor phase epitaxy. Effect of oxygen doping on semi-insulating layers of the substance; Secondary-ion mass spectrometry measurements; Measured co... | Inactive interstitial atoms; Energy-dispersive spectoscopy; intentional oxygen | 1992 |
| 24 |  | Effect of step structure on ordering in GaInP | Stringfellow, Gerald B. | Examines the effect of step structure on ordering in gallium indium phosphite (GaInP) using atomic force microscopy. Coverage of the surface by islands several monolayers in height with elongated direction; Formation of the edges of the islands; Role of the observations in explaining the nature of t... | Gallium indium phosphite (GaInP); Twin boundaries | 1995-11-12 |
| 25 |  | Effect of surfactant Sb on carrier lifetime in GaInP epilayers | Stringfellow, Gerald B. | Samples of Ga0.52In0.48P grown on (001) GaAs with small amounts of surfactant Sb were investigated using time-resolved photoluminescence. All samples show a luminescence that may be fit to a two-stage exponential decay with a fast and a slow lifetime. For growth without Sb (Sb/III(v)(0), the sample ... | Semiconductor ternary alloys; Epitaxial layer; Microstructures | 2002-01-01 |