Epitaxial growth and properties of MoOx(2
Publication Type Journal Article
School or College College of Engineering
Department Materials Science & Engineering
Creator Tiwari, Ashutosh
Other Author Bhosle, V.; Narayan, J.
Title Epitaxial growth and properties of MoOx(2<x<2.75) films
Date 2005
Description We report the growth of epitaxial molybdenum oxide (MoOx,2<x<2.75) films on c plane of sapphire substrate using pulsed laser deposition in oxygen environment. The structure was characterized using x-ray diffraction, high resolution transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). Electrical resistivity and optical properties were investigated using four-point-probe resistivity measurements and spectroscopy techniques, respectively. It was found that the film had a monoclinic structure based on MoO2 phase and showed an unusual combination of high conductivity and high transmittance in the visible region after annealing. The unusual combination of these properties was realized by systematically controlling the relative fraction of different oxidation states of molybdenum, namely Mo4+, Mo5+, and Mo6+ in the monoclinic phase. For a film 60 nm thick and annealed at 250 °C for 1 h, the ratio of Mo6+ / (Mo4++Mo5+) was determined to be ~2.9/1 using XPS, and a typical value of transmittance was ~65% and resistivity close to 1310−3 Ω cm. These results demonstrate growth of epitaxial MoOx films with tunable electrical and optical properties. Further optimization of these properties is expected to result in applications related to display panels, solar cells, chromogenic (photochromic, electrochromic, gasochromic) devices, and transparent conducting oxides. Our ability to grow epitaxial MoOx films can further aid their integration with optoelectronic and photonic devices.
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Journal of Applied Physics
Volume 97
Issue 8
First Page 83539
DOI 10.1063/1.1868852
citatation_issn 218979
Subject Epitaxy; MoO
Subject LCSH Metal oxide semiconductors; Zinc oxide; Thin films; Epitaxy; Semiconductor doping
Language eng
Bibliographic Citation Bhosle, V., Tiwari, A., & Narayan, J. (2005). Epitaxial growth and properties of MoOx(2<x<2.75) films. Journal of Applied Physics, 97(8), 083539.
Rights Management (c)American Institute of Physics. The following article appeared in Bhosle, V., Tiwari, A., & Narayan, J., Journal of Applied Physics, 97(8), 2005 and may be found at http://dx.doi.org/10.1063/1.1868852
Format Medium application/pdf
Format Extent 664,306 bytes
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Reference URL https://collections.lib.utah.edu/ark:/87278/s6r78zxg