Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes

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Publication Type Journal Article
School or College College of Science
Department Physics
Creator Williams, Clayton C.
Other Author Bussmann, E.
Title Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes
Date 2004
Description Sub-10 nm resolution can be obtained in scanning capacitance microscopy (SCM) if the probe tip is approximately of the same size. Such resolution is observed, although infrequently, with present commercially available probes. To acquire routine sub-10 nm resolution, a solid Pt metal probe has been developed with a sub-10 nm tip radius. The probe is demonstrated by SCM imaging on a cross-sectioned 70 nm gatelength field-effect transistor (FET), a shallow implant (n+/p, 24 nm junction depth), and an epitaxial staircase (p, ;75 nm steps).
Type Text
Publisher American Institute of Physics (AIP)
Journal Title Review of Scientific Instruments
Volume 75
Issue 2
First Page 422
Last Page 425
DOI 10.1063/1.1641161
citatation_issn 346748
Language eng
Bibliographic Citation Bussmann, E., & Williams, C. C. (2004). Sub-10 nm lateral spatial resolution in scanning capacitance microscopy achieved with solid platinum probes. Review of Scientific Instruments, 75(2), Feb., 422-25.
Rights Management (c)American Institute of Physics. The following article by Bussmann, E., & Williams, C. C. appeared in Jouranl of Review of Scientific Instruments, 75(2), 2004 and may be found at http://www.DOI: 10.1063/1.1641161.
Format Medium application/pdf
Format Extent 128,575 bytes
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ARK ark:/87278/s69w104f
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Reference URL https://collections.lib.utah.edu/ark:/87278/s69w104f
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